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| BDX20 PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCEX VEBO Collector to Base Voltage Ratings Value -60 -140 VBE=1.5 V Unit V V V V A A Watts C C #Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Base Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature -160 -7 -10 -7 117 200 -65 to +200 IC IB PTOT TJ TS THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.5 Unit C/W COMSET SEMICONDUCTORS 1/2 BDX20 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) VCEX ICEX ICBO IEBO h21E VCE(SAT) VBE fT Ratings Test Condition(s) Min Typ Mx Unit 10 -1.7 -5.7 -1.0 -10 -1.0 -5.0 70 -1.0 -5.0 V V mA mA mA V V MHz Collector-Emitter Sustaining IC=-200 mA, IB=0 -140 Voltage (*) Collector-Emitter IC=-100 mA, VBE=1.5 V -160 Breakdown Voltage (*) VCE=-140 V, VBE=1.5 V Collector Cutoff Current VCE=-140 V, VBE=1.5 V, TCASE=150C Collector-Base Cutoff VCB=-140 V, IE=0 Current Emitter-Base Cutoff Current VBE=-7.0 V, IC=0 Static Forward Current Transfer Ratio (*) Collector-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) Transition Frequency IC=-3.0 A, VCE=-4.0 V IC=10 A, VCE=-4.0 V IC=-3.0 A, IB=-0.3 A IC=-10 A, IB=-2 A IC=-3.0 Adc, VCE=-4.0 V IC=-10 A, VCE=-4.0 V VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz 20 4 In accordance with JEDEC Registration Data (*) Pulse Width 300 s, Duty Cycle 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 2/2 |
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